Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity.
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| Title: | Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity. |
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| Authors: | Le, Ba-Phuoc1, Chen, Jyh-Chen1,2, jcchen@ncu.edu.tw, Hu, Chieh1,2, Lin, Wei-Jie2, Tu, Chun-Chin2, Chen, Liang-Chin2 |
| Source: | Crystals (2073-4352); May2025, Vol. 15 Issue 5, p477, 17p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 20734352 |
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| DOI: | 10.3390/cryst15050477 |
