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Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity.

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Title: Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity.
Authors: Le, Ba-Phuoc1, Chen, Jyh-Chen1,2, jcchen@ncu.edu.tw, Hu, Chieh1,2, Lin, Wei-Jie2, Tu, Chun-Chin2, Chen, Liang-Chin2
Source: Crystals (2073-4352); May2025, Vol. 15 Issue 5, p477, 17p
Database: Applied Science & Technology Source
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  Data: Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity.
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        Value: 10.3390/cryst15050477
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      – Code: eng
        Text: English
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        PageCount: 17
        StartPage: 477
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      – TitleFull: Numerical Simulation of the Effect of APCVD Reactor Tilted Ceiling Height on Silicon Epitaxial Layer Thickness Uniformity.
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            NameFull: Chen, Jyh-Chen
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            – D: 01
              M: 05
              Text: May2025
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              Y: 2025
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