Interface and dielectric properties of Al/p-Si diode by organic composite interlayer for MOS.

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Bibliographic Details
Title: Interface and dielectric properties of Al/p-Si diode by organic composite interlayer for MOS.
Authors: Demirezen, S.1, selcukdemirezen@gmail.com, Dere, A.2, Çetinkaya, H. G.3, Mansour, Shehab A.4, Yakuphanoglu, F.5
Source: Journal of Materials Science: Materials in Electronics; May2025, Vol. 36 Issue 14, p1-19, 19p
Database: Applied Science & Technology Source
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ISSN:09574522
DOI:10.1007/s10854-025-14910-z