Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation.

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Title: Analysis of Threading Edge Dislocation Low-Angle Grain Boundary Network Distributions in 4H-SiC Wafers Through Synchrotron X-ray Topography and Ray-Tracing Simulation.
Authors: Cheng, Qianyu1, qyjcheng@gmail.com, Chen, Zeyu1, zeyu.chen@stonybrook.edu, Hu, Shanshan1, shanshan.hu@stonybrook.edu, Raghothamachar, Balaji1, balaji.raghothamachar@stonybrook.edu, Dudley, Michael1, michael.dudley@stonybrook.edu
Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5037-5050, 14p
Database: Applied Science & Technology Source
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ISSN:03615235
DOI:10.1007/s11664-025-11793-y