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Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.

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Bibliographic Details
Title: Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.
Authors: Chen, Zeyu1, zeyu.chen@stonybrook.edu, Cheng, Qianyu1, Hu, Shanshan1, Raghothamachar, Balaji1, Dudley, Michael1
Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5066-5074, 9p
Database: Applied Science & Technology Source
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ISSN:03615235
DOI:10.1007/s11664-025-11918-3