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Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.

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Title: Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.
Authors: Chen, Zeyu1, zeyu.chen@stonybrook.edu, Cheng, Qianyu1, Hu, Shanshan1, Raghothamachar, Balaji1, Dudley, Michael1
Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5066-5074, 9p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.
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  Data: <searchLink fieldCode="AU" term="%22Chen%2C+Zeyu%22">Chen, Zeyu</searchLink><relatesTo>1</relatesTo>, <i>zeyu.chen@stonybrook.edu</i><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Qianyu%22">Cheng, Qianyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Hu%2C+Shanshan%22">Hu, Shanshan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Raghothamachar%2C+Balaji%22">Raghothamachar, Balaji</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Dudley%2C+Michael%22">Dudley, Michael</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; Jul2025, Vol. 54 Issue 7, p5066-5074, 9p
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        Value: 10.1007/s11664-025-11918-3
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 5066
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      – TitleFull: Analysis of Dislocation Contrast in Grazing Incidence Synchrotron Monochromatic Beam X-ray Topographs of 4H-SiC Wafers in 224¯ 16 Reflection.
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            NameFull: Chen, Zeyu
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            NameFull: Cheng, Qianyu
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            – D: 01
              M: 07
              Text: Jul2025
              Type: published
              Y: 2025
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