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High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching.

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Bibliographic Details
Title:	High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching.
Authors:	Huang, Yuan^1,2, Sutter, Eli³, Parkinson, Bruce A.⁴, Sutter, Peter⁵, psutter@unl.edu
Source:	Advanced Electronic Materials; May2025, Vol. 11 Issue 7, p1-8, 8p
Database:	Applied Science & Technology Source

Description
ISSN:	2199160X
DOI:	10.1002/aelm.202400691