APA (7th ed.) Citation

Huang, Y., Sutter, E., Parkinson, B. A., & Sutter, P. (2025). High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching. Advanced Electronic Materials, 11(7), 1. https://doi.org/10.1002/aelm.202400691

Chicago Style (17th ed.) Citation

Huang, Yuan, Eli Sutter, Bruce A. Parkinson, and Peter Sutter. "High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching." Advanced Electronic Materials 11, no. 7 (2025): 1. https://doi.org/10.1002/aelm.202400691.

MLA (9th ed.) Citation

Huang, Yuan, et al. "High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching." Advanced Electronic Materials, vol. 11, no. 7, 2025, p. 1, https://doi.org/10.1002/aelm.202400691.