APA (7th ed.) Citation

Gao, B., Zhu, J., Li, M., Qin, L., Qian, Y., Huang, S., . . . Ma, X. (2025). Multidimensional validation of low-damage BCl[formula omitted]/Ar atomic layer etching for AlGaN/GaN HEMTs. Materials Science in Semiconductor Processing, 198, N.PAG. https://doi.org/10.1016/j.mssp.2025.109742

Chicago Style (17th ed.) Citation

Gao, Boxuan, Jiejie Zhu, Mengdi Li, Lingjie Qin, Yuchen Qian, Simei Huang, Huilin Li, Wanshuo Liao, and Xiaohua Ma. "Multidimensional Validation of Low-damage BCl[formula Omitted]/Ar Atomic Layer Etching for AlGaN/GaN HEMTs." Materials Science in Semiconductor Processing 198 (2025): N.PAG. https://doi.org/10.1016/j.mssp.2025.109742.

MLA (9th ed.) Citation

Gao, Boxuan, et al. "Multidimensional Validation of Low-damage BCl[formula Omitted]/Ar Atomic Layer Etching for AlGaN/GaN HEMTs." Materials Science in Semiconductor Processing, vol. 198, 2025, p. N.PAG, https://doi.org/10.1016/j.mssp.2025.109742.