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Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors.

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Bibliographic Details
Title:	Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors.
Authors:	Zha, Wenjing^1,2, Fang, Suhui¹, Gao, Xiaofeng¹, Zou, Mijie¹, Deng, Jiuzhou¹, Hu, Longjie¹, Zheng, Dingshan¹, dszheng82@163.com, Liao, Yan-Hua², liaoyanhua@whu.edu.cn
Source:	Journal of Electronic Materials; Sep2025, Vol. 54 Issue 9, p7702-7708, 7p
Database:	Applied Science & Technology Source
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Description
ISSN:	03615235
DOI:	10.1007/s11664-025-12091-3