APA (7th ed.) Citation

Zha, W., Fang, S., Gao, X., Zou, M., Deng, J., Hu, L., . . . Liao, Y. (2025). Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors. Journal of Electronic Materials, 54(9), 7702. https://doi.org/10.1007/s11664-025-12091-3

Chicago Style (17th ed.) Citation

Zha, Wenjing, Suhui Fang, Xiaofeng Gao, Mijie Zou, Jiuzhou Deng, Longjie Hu, Dingshan Zheng, and Yan-Hua Liao. "Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors." Journal of Electronic Materials 54, no. 9 (2025): 7702. https://doi.org/10.1007/s11664-025-12091-3.

MLA (9th ed.) Citation

Zha, Wenjing, et al. "Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors." Journal of Electronic Materials, vol. 54, no. 9, 2025, p. 7702, https://doi.org/10.1007/s11664-025-12091-3.