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Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors.

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Title: Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors.
Authors: Zha, Wenjing1,2, Fang, Suhui1, Gao, Xiaofeng1, Zou, Mijie1, Deng, Jiuzhou1, Hu, Longjie1, Zheng, Dingshan1, dszheng82@163.com, Liao, Yan-Hua2, liaoyanhua@whu.edu.cn
Source: Journal of Electronic Materials; Sep2025, Vol. 54 Issue 9, p7702-7708, 7p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 187262809
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors.
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s11664-025-12091-3
    Languages:
      – Code: eng
        Text: English
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        PageCount: 7
        StartPage: 7702
    Titles:
      – TitleFull: Tin Doping Enhanced Carrier Mobility and Stability in Amorphous IGZTO Thin Film Transistors.
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            NameFull: Zha, Wenjing
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            NameFull: Fang, Suhui
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            NameFull: Zou, Mijie
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            NameFull: Deng, Jiuzhou
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            NameFull: Hu, Longjie
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            NameFull: Zheng, Dingshan
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            NameFull: Liao, Yan-Hua
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            – D: 01
              M: 09
              Text: Sep2025
              Type: published
              Y: 2025
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              Value: 03615235
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              Value: 54
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              Value: 9
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            – TitleFull: Journal of Electronic Materials
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