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P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.

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Bibliographic Details
Title: P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.
Authors: Lim, Taebin1, Jae Kim, Young2, Sun, Jiwon1, Duck Kim, Young2, Jang, Jin1
Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p1459-1462, 4p
Database: Applied Science & Technology Source
Description
ISSN:0097966X
DOI:10.1002/sdtp.18467