APA (7th ed.) Citation

Lim, T., Jae Kim, Y., Sun, J., Duck Kim, Y., & Jang, J. (2025). P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors. SID Symposium Digest of Technical Papers, 56(1), 1459. https://doi.org/10.1002/sdtp.18467

Chicago Style (17th ed.) Citation

Lim, Taebin, Young Jae Kim, Jiwon Sun, Young Duck Kim, and Jin Jang. "P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors." SID Symposium Digest of Technical Papers 56, no. 1 (2025): 1459. https://doi.org/10.1002/sdtp.18467.

MLA (9th ed.) Citation

Lim, Taebin, et al. "P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors." SID Symposium Digest of Technical Papers, vol. 56, no. 1, 2025, p. 1459, https://doi.org/10.1002/sdtp.18467.