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P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.

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Title: P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.
Authors: Lim, Taebin1, Jae Kim, Young2, Sun, Jiwon1, Duck Kim, Young2, Jang, Jin1
Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p1459-1462, 4p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.
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  Data: <searchLink fieldCode="JN" term="%22SID+Symposium+Digest+of+Technical+Papers%22">SID Symposium Digest of Technical Papers</searchLink>; Jun2025, Vol. 56 Issue 1, p1459-1462, 4p
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      – Type: doi
        Value: 10.1002/sdtp.18467
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      – Code: eng
        Text: English
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        StartPage: 1459
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      – TitleFull: P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.
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            NameFull: Lim, Taebin
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            NameFull: Jae Kim, Young
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            NameFull: Sun, Jiwon
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            NameFull: Duck Kim, Young
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            – D: 01
              M: 06
              Text: Jun2025
              Type: published
              Y: 2025
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              Value: 56
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