P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors.
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| Title: | P‐19: Reduction of Oxygen Vacancy and Hydroxyl Group Defects in Oxide Semiconductor by Chloroform Treatment for Short‐Channel Thin‐Film Transistors. |
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| Authors: | Lim, Taebin1, Jae Kim, Young2, Sun, Jiwon1, Duck Kim, Young2, Jang, Jin1 |
| Source: | SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p1459-1462, 4p |
| Database: | Applied Science & Technology Source |
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