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Enhancing Wafer Notch Detection for Ion Implantation: Optimized YOLOv8 Approach with Global Attention Mechanism.

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Title: Enhancing Wafer Notch Detection for Ion Implantation: Optimized YOLOv8 Approach with Global Attention Mechanism.
Authors: Zhang, Yuanhao1, Sim, Hyo Jun1, Hwang, Jong Jin1, Moon, Seung Jae, smoon@hanyang.ac.kr
Source: Applied Sciences (2076-3417); Aug2025, Vol. 15 Issue 16, p9122, 17p
Database: Applied Science & Technology Source
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  Data: Enhancing Wafer Notch Detection for Ion Implantation: Optimized YOLOv8 Approach with Global Attention Mechanism.
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  Data: <searchLink fieldCode="AU" term="%22Zhang%2C+Yuanhao%22">Zhang, Yuanhao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sim%2C+Hyo+Jun%22">Sim, Hyo Jun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Hwang%2C+Jong+Jin%22">Hwang, Jong Jin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Moon%2C+Seung+Jae%22">Moon, Seung Jae</searchLink>, <i>smoon@hanyang.ac.kr</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Sciences+%282076-3417%29%22">Applied Sciences (2076-3417)</searchLink>; Aug2025, Vol. 15 Issue 16, p9122, 17p
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      – Type: doi
        Value: 10.3390/app15169122
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      – Code: eng
        Text: English
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        PageCount: 17
        StartPage: 9122
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      – TitleFull: Enhancing Wafer Notch Detection for Ion Implantation: Optimized YOLOv8 Approach with Global Attention Mechanism.
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            NameFull: Zhang, Yuanhao
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            NameFull: Sim, Hyo Jun
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            NameFull: Hwang, Jong Jin
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              Text: Aug2025
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              Value: 15
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