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Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node.

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Bibliographic Details
Title: Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node.
Authors: Ling, Wanyi1, Ren, Kun1, kun.ren@zju.edu.cn, Qi, Dianyu1, kun.ren@zju.edu.cn, Wu, Yongyu1,2, Li, Guangji2, Zhou, Miao2, Xu, Qingshuang2, Li, Xuan2, Xia, Zhenghui2, Fan, Dertsyr3, Chuang, Ichun3, Cheng, TzungWen3, Tsai, Chenming3, Gao, Dawei1,2, kun.ren@zju.edu.cn
Source: Applied Physics Letters; 8/25/2025, Vol. 127 Issue 8, p1-8, 8p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0266252