Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node.

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Title: Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node.
Authors: Ling, Wanyi1, Ren, Kun1, kun.ren@zju.edu.cn, Qi, Dianyu1, kun.ren@zju.edu.cn, Wu, Yongyu1,2, Li, Guangji2, Zhou, Miao2, Xu, Qingshuang2, Li, Xuan2, Xia, Zhenghui2, Fan, Dertsyr3, Chuang, Ichun3, Cheng, TzungWen3, Tsai, Chenming3, Gao, Dawei1,2, kun.ren@zju.edu.cn
Source: Applied Physics Letters; 8/25/2025, Vol. 127 Issue 8, p1-8, 8p
Database: Applied Science & Technology Source
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An: 187640983
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  Data: Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 8/25/2025, Vol. 127 Issue 8, p1-8, 8p
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        Value: 10.1063/5.0266252
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        Text: English
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      – TitleFull: Investigation of L-shaped split-gate eFlash memory with enhanced gate coupling in a 55 nm node.
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              M: 08
              Text: 8/25/2025
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              Y: 2025
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