Stochastic resonance as a defect transformation mechanism in III-V semiconductor compounds under the action of electromagnetic and pulsed magnetic fields.

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Bibliographic Details
Title: Stochastic resonance as a defect transformation mechanism in III-V semiconductor compounds under the action of electromagnetic and pulsed magnetic fields.
Authors: Milenin, G. V.1, Redko, R. A.1,2
Source: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2025, Vol. 28 Issue 2, p142-146, 5p
Database: Applied Science & Technology Source
Description
ISSN:15608034
DOI:10.15407/spqeo28.02.142