Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer.
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| Title: | Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer. |
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| Authors: | Huang, Simei1, Zhu, Jiejie1, jjzhu@mail.xidian.edu.cn, Li, Mengdi1, Qin, Lingjie1, Li, Huilin1, Gao, Boxuan1, Zhu, Qing1, Ma, Xiaohua1 |
| Source: | Microelectronics Reliability; Nov2025, Vol. 174, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00262714 |
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| DOI: | 10.1016/j.microrel.2025.115877 |
