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Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer.

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Title: Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer.
Authors: Huang, Simei1, Zhu, Jiejie1, jjzhu@mail.xidian.edu.cn, Li, Mengdi1, Qin, Lingjie1, Li, Huilin1, Gao, Boxuan1, Zhu, Qing1, Ma, Xiaohua1
Source: Microelectronics Reliability; Nov2025, Vol. 174, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 187941892
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Huang%2C+Simei%22">Huang, Simei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhu%2C+Jiejie%22">Zhu, Jiejie</searchLink><relatesTo>1</relatesTo>, <i>jjzhu@mail.xidian.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Li%2C+Mengdi%22">Li, Mengdi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Qin%2C+Lingjie%22">Qin, Lingjie</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Huilin%22">Li, Huilin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Gao%2C+Boxuan%22">Gao, Boxuan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhu%2C+Qing%22">Zhu, Qing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ma%2C+Xiaohua%22">Ma, Xiaohua</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>; Nov2025, Vol. 174, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=187941892
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.microrel.2025.115877
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 1
        StartPage: N.PAG
    Titles:
      – TitleFull: Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Huang, Simei
      – PersonEntity:
          Name:
            NameFull: Zhu, Jiejie
      – PersonEntity:
          Name:
            NameFull: Li, Mengdi
      – PersonEntity:
          Name:
            NameFull: Qin, Lingjie
      – PersonEntity:
          Name:
            NameFull: Li, Huilin
      – PersonEntity:
          Name:
            NameFull: Gao, Boxuan
      – PersonEntity:
          Name:
            NameFull: Zhu, Qing
      – PersonEntity:
          Name:
            NameFull: Ma, Xiaohua
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 11
              Text: Nov2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 00262714
          Numbering:
            – Type: volume
              Value: 174
          Titles:
            – TitleFull: Microelectronics Reliability
              Type: main
ResultId 1