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X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping.

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Bibliographic Details
Title: X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping.
Authors: Stanchu, Hryhorii1, Kryvyi, Serhii1, de Oliveira, Fernando M.1, Margiotta, Stephen2, Cook, Matthew2, Mazur, Yuriy I.1, Grant, Perry C.3, Du, Wei1,4, Li, Baohua3, Salamo, Gregory1,5, Yu, Shui-Qing1,4, syu@uark.edu
Source: Journal of Applied Physics; 9/14/2025, Vol. 138 Issue 10, p1-8, 8p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/5.0291304