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HgCdTe Avalanche Photodiodes by Plasma-Induced p-to-n Type Conversion for 2-μm Wavelength Applications.

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Bibliographic Details
Title: HgCdTe Avalanche Photodiodes by Plasma-Induced p-to-n Type Conversion for 2-μm Wavelength Applications.
Authors: Umana-Membreno, G. A.1, gilberto.umanamembreno@uwa.edu.au, Kala, H.1, Gu, R.1, Mukherji, P. N.1, Morley, D. J. B.1, Akhavan, N. D.1, Antoszewski, J.1, Faraone, L.1
Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8363-8371, 9p
Database: Applied Science & Technology Source
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