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Structural and Electrical Properties of Si-Doped β-Ga 2 O 3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature.

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Bibliographic Details
Title:	Structural and Electrical Properties of Si-Doped β-Ga 2 O 3 Thin Films Deposited by RF Sputtering: Effects of Oxygen Flow Ratio and Post-Annealing Temperature.
Authors:	Kim, Haechan¹, Kubota, Yuta², Matsushita, Nobuhiro^2,3, Lee, Gonjae^1,3, Hong, Jeongsoo^1,2, hongjs@gachon.ac.kr
Source:	Coatings (2079-6412); Oct2025, Vol. 15 Issue 10, p1181, 14p
Database:	Applied Science & Technology Source
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ISSN:	20796412
DOI:	10.3390/coatings15101181