Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy.

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Bibliographic Details
Title: Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy.
Authors: Hamouda, W.1, Yamashita, Y.2, Ueda, S.2,3, Matzen, S.4, Renault, O.5, Mehmood, F.6, Mikolajick, T.6, Schroeder, U.6, Barrett, N.1, nick.barrett@cea.fr
Source: Applied Physics Letters; 11/3/2025, Vol. 127 Issue 18, p1-7, 7p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0288835