Bibliographic Details
| Title: |
720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth. |
| Authors: |
El Amrani, Mohammed1, mohammed.elamrani@cea.fr, Lyu, Junrui2, Wen, Xinyi2, Marcuzzi, Alberto2,3, Plaza Arguello, David1, M'Qaddem, Zakariae1, Kaltsounis, Thomas1, El Rammouz, Hala1, Meneghesso, Gaudenzio3, Meneghini, Matteo3,4, Charles, Matthew1, Buckley, Julien1, Chowdhury, Srabanti2 |
| Source: |
Journal of Applied Physics; 12/5/2025, Vol. 138 Issue 21, p1-8, 8p |
| Database: |
Applied Science & Technology Source |
