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720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth.

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Title: 720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth.
Authors: El Amrani, Mohammed1, mohammed.elamrani@cea.fr, Lyu, Junrui2, Wen, Xinyi2, Marcuzzi, Alberto2,3, Plaza Arguello, David1, M'Qaddem, Zakariae1, Kaltsounis, Thomas1, El Rammouz, Hala1, Meneghesso, Gaudenzio3, Meneghini, Matteo3,4, Charles, Matthew1, Buckley, Julien1, Chowdhury, Srabanti2
Source: Journal of Applied Physics; 12/5/2025, Vol. 138 Issue 21, p1-8, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 189857393
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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        Value: 10.1063/5.0299842
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        Text: English
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      – TitleFull: 720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth.
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              Text: 12/5/2025
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              Y: 2025
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