Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy.
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| Title: | Defect analysis of Sn-doped Ga2O3/SiC hetero-structured Schottky diodes using deep level transient spectroscopy. |
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| Authors: | Lee, Tae-Hee1, Choi, Ji-Soo1, Park, Se-Rim1, Chung, Seung-Hwan1, Lee, Geon-Hee1, Lim, Jae Hyeok2, Bae, Si-Young3, Koo, Sang-Mo1, smkoo@kw.ac.kr |
| Source: | Journal of Applied Physics; 12/5/2025, Vol. 138 Issue 21, p1-7, 7p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/5.0287493 |
