Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration.
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| Title: | Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration. |
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| Authors: | Seo, Hyeong Jun1, Byun, Kanghyeon1, Kang, Minseung1, Roh, Youngchae1, Joe, Changhoon1, Kim, Sangbum1, sangbum.kim@snu.ac.kr |
| Source: | Advanced Intelligent Systems (2640-4567); Dec2025, Vol. 7 Issue 12, p1-9, 9p |
| Database: | Applied Science & Technology Source |
| ISSN: | 26404567 |
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| DOI: | 10.1002/aisy.202500139 |
