View in EDS

Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration.

Saved in:
Bibliographic Details
Title: Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration.
Authors: Seo, Hyeong Jun1, Byun, Kanghyeon1, Kang, Minseung1, Roh, Youngchae1, Joe, Changhoon1, Kim, Sangbum1, sangbum.kim@snu.ac.kr
Source: Advanced Intelligent Systems (2640-4567); Dec2025, Vol. 7 Issue 12, p1-9, 9p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 190222491
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Seo%2C+Hyeong+Jun%22">Seo, Hyeong Jun</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Byun%2C+Kanghyeon%22">Byun, Kanghyeon</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kang%2C+Minseung%22">Kang, Minseung</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Roh%2C+Youngchae%22">Roh, Youngchae</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Joe%2C+Changhoon%22">Joe, Changhoon</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Sangbum%22">Kim, Sangbum</searchLink><relatesTo>1</relatesTo>, <i>sangbum.kim@snu.ac.kr</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Advanced+Intelligent+Systems+%282640-4567%29%22">Advanced Intelligent Systems (2640-4567)</searchLink>; Dec2025, Vol. 7 Issue 12, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=190222491
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/aisy.202500139
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 9
        StartPage: 1
    Titles:
      – TitleFull: Ternary Content Addressable Memory with In–Ga–Zn–O Thin‐Film Transistor Technology for Enhanced Uniformity and Endurance in Efficient Distance‐Based Algorithm Acceleration.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Seo, Hyeong Jun
      – PersonEntity:
          Name:
            NameFull: Byun, Kanghyeon
      – PersonEntity:
          Name:
            NameFull: Kang, Minseung
      – PersonEntity:
          Name:
            NameFull: Roh, Youngchae
      – PersonEntity:
          Name:
            NameFull: Joe, Changhoon
      – PersonEntity:
          Name:
            NameFull: Kim, Sangbum
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 12
              Text: Dec2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 26404567
          Numbering:
            – Type: volume
              Value: 7
            – Type: issue
              Value: 12
          Titles:
            – TitleFull: Advanced Intelligent Systems (2640-4567)
              Type: main
ResultId 1