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Defect-state engineering in (Bi,Sb)2Te3 topological insulators via indium doping.

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Bibliographic Details
Title: Defect-state engineering in (Bi,Sb)2Te3 topological insulators via indium doping.
Authors: Sharma, Kanav1, Banerjee, Ritam1, Nandi, Anuvab1, Gopal, Radha Krishna2, Mitra, Chiranjib1, chiranjib@iiserkol.ac.in
Source: Journal of Physics D: Applied Physics; 2026, Vol. 59 Issue 2, p1-9, 9p
Database: Applied Science & Technology Source
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