APA (7th ed.) Citation

Li, H., Zhao, X., Li, J., & Li, M. (2026). In Situ Single‐Event Upset Tolerant Flip‐Flip Designs for Nanoscale Technology. International Journal of Circuit Theory & Applications, 54(3), 1373. https://doi.org/10.1002/cta.70014

Chicago Style (17th ed.) Citation

Li, Hongchen, Xiaofeng Zhao, Jie Li, and Mingxue Li. "In Situ Single‐Event Upset Tolerant Flip‐Flip Designs for Nanoscale Technology." International Journal of Circuit Theory & Applications 54, no. 3 (2026): 1373. https://doi.org/10.1002/cta.70014.

MLA (9th ed.) Citation

Li, Hongchen, et al. "In Situ Single‐Event Upset Tolerant Flip‐Flip Designs for Nanoscale Technology." International Journal of Circuit Theory & Applications, vol. 54, no. 3, 2026, p. 1373, https://doi.org/10.1002/cta.70014.