Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions.

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Bibliographic Details
Title: Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions.
Authors: Abdullayev, Jo'shqin Shakirovich1, j.sh.abdullayev6@gmail.com, Abdullayev, Jonibek Shakirovich2, jonibek.a@urdu.uz, Sapaev, Ibrokhim Bayramdurdiyevich1,3,4,5, i.sapaev@tiiame.uz, Razzokov, Jamoliddin Inotullaevich6,7, Jamoliddin.razzokov@ifar.uz, Juraev, Davron Aslonqulovich8,9,10, djuraev@beu.edu.az, Elsayed, Ebrahim E.11, engebrahem16@gmail.com
Source: Journal of Electronic Materials; Apr2026, Vol. 55 Issue 4, p3795-3806, 12p
Database: Applied Science & Technology Source
Description
ISSN:03615235
DOI:10.1007/s11664-026-12702-7