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GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers.

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Bibliographic Details
Title: GaN HEMT with improved electrical performance enabled by hybrid AlN nucleation layers.
Authors: Yu, Bowei1,2, Zhang, Haochen1, Liu, Hongyu2, Li, Jiayao1,2, Ye, Fang2, Chen, Li2, Tang, Jun3, Qi, Shengli4, Liu, Zhibin5, Sun, Haiding1, haiding@ustc.edu.cn, Ye, Jichun2, Guo, Wei2, haiding@ustc.edu.cn
Source: Applied Physics Letters; 3/2/2026, Vol. 128 Issue 9, p1-8, 8p
Database: Applied Science & Technology Source
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