View in EDS

AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments.

Saved in:
Bibliographic Details
Title: AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments.
Authors: Garigapati, N. S.1, navya_sri.garigapati@eit.lth.se, Logotheti, A.2,3, So, B.2, Malm, J.2, Prystawko, P.4, Grzegory, I.4, Nawaz, M.5, Björk, M.6, Darakchieva, V.2,7, Lind, E.8
Source: Applied Physics Letters; 3/16/2026, Vol. 128 Issue 11, p1-5, 5p
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0310395