View in EDS

AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments.

Saved in:
Bibliographic Details
Title: AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments.
Authors: Garigapati, N. S.1, navya_sri.garigapati@eit.lth.se, Logotheti, A.2,3, So, B.2, Malm, J.2, Prystawko, P.4, Grzegory, I.4, Nawaz, M.5, Björk, M.6, Darakchieva, V.2,7, Lind, E.8
Source: Applied Physics Letters; 3/16/2026, Vol. 128 Issue 11, p1-5, 5p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192464343
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Garigapati%2C+N%2E+S%2E%22">Garigapati, N. S.</searchLink><relatesTo>1</relatesTo>, <i>navya_sri.garigapati@eit.lth.se</i><br /><searchLink fieldCode="AU" term="%22Logotheti%2C+A%2E%22">Logotheti, A.</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22So%2C+B%2E%22">So, B.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Malm%2C+J%2E%22">Malm, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Prystawko%2C+P%2E%22">Prystawko, P.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Grzegory%2C+I%2E%22">Grzegory, I.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Nawaz%2C+M%2E%22">Nawaz, M.</searchLink><relatesTo>5</relatesTo><br /><searchLink fieldCode="AU" term="%22Björk%2C+M%2E%22">Björk, M.</searchLink><relatesTo>6</relatesTo><br /><searchLink fieldCode="AU" term="%22Darakchieva%2C+V%2E%22">Darakchieva, V.</searchLink><relatesTo>2,7</relatesTo><br /><searchLink fieldCode="AU" term="%22Lind%2C+E%2E%22">Lind, E.</searchLink><relatesTo>8</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 3/16/2026, Vol. 128 Issue 11, p1-5, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192464343
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0310395
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 1
    Titles:
      – TitleFull: AlGaN (2.5%) fully vertical FinFETs: Influence of m- and a-plane substrate alignments.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Garigapati, N. S.
      – PersonEntity:
          Name:
            NameFull: Logotheti, A.
      – PersonEntity:
          Name:
            NameFull: So, B.
      – PersonEntity:
          Name:
            NameFull: Malm, J.
      – PersonEntity:
          Name:
            NameFull: Prystawko, P.
      – PersonEntity:
          Name:
            NameFull: Grzegory, I.
      – PersonEntity:
          Name:
            NameFull: Nawaz, M.
      – PersonEntity:
          Name:
            NameFull: Björk, M.
      – PersonEntity:
          Name:
            NameFull: Darakchieva, V.
      – PersonEntity:
          Name:
            NameFull: Lind, E.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 16
              M: 03
              Text: 3/16/2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 128
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1