Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform.
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| Title: | Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform. |
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| Authors: | Tran, Dat Q.1, dattq@stanford.edu, Soman, Rohith1, Kim, Jeong-Kyu1, Malakoutian, Mohamadali1, Chowdhury, Srabanti1, srabanti@stanford.edu |
| Source: | Journal of Applied Physics; 3/21/2026, Vol. 139 Issue 11, p1-9, 9p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/5.0304824 |
