APA (7th ed.) Citation

Tran, D. Q., Soman, R., Kim, J., Malakoutian, M., & Chowdhury, S. (2026). Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform. Journal of Applied Physics, 139(11), 1. https://doi.org/10.1063/5.0304824

Chicago Style (17th ed.) Citation

Tran, Dat Q., Rohith Soman, Jeong-Kyu Kim, Mohamadali Malakoutian, and Srabanti Chowdhury. "Cooling Performance of Top-side Polycrystalline Diamond Integration in RF-power N-polar GaN High-electron-mobility Transistors Predicted Using a Robust Modeling Platform." Journal of Applied Physics 139, no. 11 (2026): 1. https://doi.org/10.1063/5.0304824.

MLA (9th ed.) Citation

Tran, Dat Q., et al. "Cooling Performance of Top-side Polycrystalline Diamond Integration in RF-power N-polar GaN High-electron-mobility Transistors Predicted Using a Robust Modeling Platform." Journal of Applied Physics, vol. 139, no. 11, 2026, p. 1, https://doi.org/10.1063/5.0304824.