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Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform.

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Title: Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform.
Authors: Tran, Dat Q.1, dattq@stanford.edu, Soman, Rohith1, Kim, Jeong-Kyu1, Malakoutian, Mohamadali1, Chowdhury, Srabanti1, srabanti@stanford.edu
Source: Journal of Applied Physics; 3/21/2026, Vol. 139 Issue 11, p1-9, 9p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192464856
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform.
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  Data: <searchLink fieldCode="AU" term="%22Tran%2C+Dat+Q%2E%22">Tran, Dat Q.</searchLink><relatesTo>1</relatesTo>, <i>dattq@stanford.edu</i><br /><searchLink fieldCode="AU" term="%22Soman%2C+Rohith%22">Soman, Rohith</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Jeong-Kyu%22">Kim, Jeong-Kyu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Malakoutian%2C+Mohamadali%22">Malakoutian, Mohamadali</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chowdhury%2C+Srabanti%22">Chowdhury, Srabanti</searchLink><relatesTo>1</relatesTo>, <i>srabanti@stanford.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 3/21/2026, Vol. 139 Issue 11, p1-9, 9p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192464856
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1063/5.0304824
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Cooling performance of top-side polycrystalline diamond integration in RF-power N-polar GaN high-electron-mobility transistors predicted using a robust modeling platform.
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            NameFull: Tran, Dat Q.
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            NameFull: Soman, Rohith
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            NameFull: Kim, Jeong-Kyu
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            NameFull: Malakoutian, Mohamadali
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            – D: 21
              M: 03
              Text: 3/21/2026
              Type: published
              Y: 2026
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              Value: 139
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