Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors.
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| Title: | Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors. |
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| Authors: | Lee, Seung-Yoon1, Park, Ki-Nam2, Kim, Sihyun1, skim@sogang.ac.kr, Han, Joon-Kyu2, skim@sogang.ac.kr |
| Source: | Applied Physics Letters; 3/23/2026, Vol. 128 Issue 12, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0320207 |
