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Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors.

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Bibliographic Details
Title: Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors.
Authors: Lee, Seung-Yoon1, Park, Ki-Nam2, Kim, Sihyun1, skim@sogang.ac.kr, Han, Joon-Kyu2, skim@sogang.ac.kr
Source: Applied Physics Letters; 3/23/2026, Vol. 128 Issue 12, p1-6, 6p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192603634
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Lee%2C+Seung-Yoon%22">Lee, Seung-Yoon</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Park%2C+Ki-Nam%22">Park, Ki-Nam</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Kim%2C+Sihyun%22">Kim, Sihyun</searchLink><relatesTo>1</relatesTo>, <i>skim@sogang.ac.kr</i><br /><searchLink fieldCode="AU" term="%22Han%2C+Joon-Kyu%22">Han, Joon-Kyu</searchLink><relatesTo>2</relatesTo>, <i>skim@sogang.ac.kr</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 3/23/2026, Vol. 128 Issue 12, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192603634
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0320207
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Three-layer work-function gate for suppressing floating-body effects on vertical-channel DRAM access transistors.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Lee, Seung-Yoon
      – PersonEntity:
          Name:
            NameFull: Park, Ki-Nam
      – PersonEntity:
          Name:
            NameFull: Kim, Sihyun
      – PersonEntity:
          Name:
            NameFull: Han, Joon-Kyu
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 23
              M: 03
              Text: 3/23/2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 128
            – Type: issue
              Value: 12
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1