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Mg Doping Gradient Engineering by MOCVD for Threshold Voltage Enhancement in Si-Based p-GaN E-Mode HEMTs.

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Bibliographic Details
Title:	Mg Doping Gradient Engineering by MOCVD for Threshold Voltage Enhancement in Si-Based p-GaN E-Mode HEMTs.
Authors:	Chen, Changyao¹, Zhang, Shuhan¹, Fan, Qian¹, Ni, Xianfeng¹, Gu, Xing¹, xinggu@seu.edu.cn
Source:	Coatings (2079-6412); Apr2026, Vol. 16 Issue 4, p476, 16p
Database:	Applied Science & Technology Source
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ISSN:	20796412
DOI:	10.3390/coatings16040476