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Mg Doping Gradient Engineering by MOCVD for Threshold Voltage Enhancement in Si-Based p-GaN E-Mode HEMTs.

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Title: Mg Doping Gradient Engineering by MOCVD for Threshold Voltage Enhancement in Si-Based p-GaN E-Mode HEMTs.
Authors: Chen, Changyao1, Zhang, Shuhan1, Fan, Qian1, Ni, Xianfeng1, Gu, Xing1, xinggu@seu.edu.cn
Source: Coatings (2079-6412); Apr2026, Vol. 16 Issue 4, p476, 16p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193439957
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Mg Doping Gradient Engineering by MOCVD for Threshold Voltage Enhancement in Si-Based p-GaN E-Mode HEMTs.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Chen%2C+Changyao%22">Chen, Changyao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Shuhan%22">Zhang, Shuhan</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Fan%2C+Qian%22">Fan, Qian</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ni%2C+Xianfeng%22">Ni, Xianfeng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Gu%2C+Xing%22">Gu, Xing</searchLink><relatesTo>1</relatesTo>, <i>xinggu@seu.edu.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Coatings+%282079-6412%29%22">Coatings (2079-6412)</searchLink>; Apr2026, Vol. 16 Issue 4, p476, 16p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=193439957
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.3390/coatings16040476
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 16
        StartPage: 476
    Titles:
      – TitleFull: Mg Doping Gradient Engineering by MOCVD for Threshold Voltage Enhancement in Si-Based p-GaN E-Mode HEMTs.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Chen, Changyao
      – PersonEntity:
          Name:
            NameFull: Zhang, Shuhan
      – PersonEntity:
          Name:
            NameFull: Fan, Qian
      – PersonEntity:
          Name:
            NameFull: Ni, Xianfeng
      – PersonEntity:
          Name:
            NameFull: Gu, Xing
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 20796412
          Numbering:
            – Type: volume
              Value: 16
            – Type: issue
              Value: 4
          Titles:
            – TitleFull: Coatings (2079-6412)
              Type: main
ResultId 1