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Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy.

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Bibliographic Details
Title:	Temperature-Dependent Sn Incorporation and Defect Formation in Pseudomorphic SiSn Layers on Si (001) via Molecular Beam Epitaxy.
Authors:	Zhang, Diandian¹, Eldose, Nirosh M.², Baral, Dinesh^1,2,3, Stanchu, Hryhorii^1,2, Benamara, Mourad^1,2, Du, Wei^1,2,3, Salamo, Gregory J.^2,3, Yu, Shui-Qing^1,2, syu@uark.edu
Source:	Crystals (2073-4352); Apr2026, Vol. 16 Issue 4, p262, 10p
Database:	Applied Science & Technology Source
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ISSN:	20734352
DOI:	10.3390/cryst16040262