Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.

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Bibliographic Details
Title: Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.
Authors: Singla, Mehak1, mehaksingla94@gmail.com, Sharma, Neeraj1, sharma_n@pu.ac.in, Saini, Amit2, Madhu, Charu1
Source: Journal of Circuits, Systems & Computers; 7/15/2026, Vol. 35 Issue 11, p1-16, 16p
Database: Applied Science & Technology Source
Description
ISSN:02181266
DOI:10.1142/S0218126626500611