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Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.

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Title: Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.
Authors: Singla, Mehak1, mehaksingla94@gmail.com, Sharma, Neeraj1, sharma_n@pu.ac.in, Saini, Amit2, Madhu, Charu1
Source: Journal of Circuits, Systems & Computers; 7/15/2026, Vol. 35 Issue 11, p1-16, 16p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 193837343
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1142/S0218126626500611
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      – Code: eng
        Text: English
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        PageCount: 16
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      – TitleFull: Electrostatically Doped Dual Gate Schottky Barrier Nanotube FET: An Optimized Design for High Performance Applications.
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            NameFull: Singla, Mehak
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            NameFull: Sharma, Neeraj
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            NameFull: Saini, Amit
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            – D: 15
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              Text: 7/15/2026
              Type: published
              Y: 2026
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              Value: 35
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              Value: 11
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