Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection.
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| Title: | Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection. |
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| Authors: | Olenych, I. B.1, igor.olenych@lnu.edu.ua, Horbenko, Yu. Yu.2, Pavlyk, M. R.1, Sokolovskii, B. S.1, Dzendzelyuk, O. S.1 |
| Source: | Journal of Nano- & Electronic Physics; 2026, Vol. 18 Issue 2, p02026-1-02026-5, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 20776772 |
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| DOI: | 10.21272/jnep.18(2).02026 |
