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Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection.

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Title: Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection.
Authors: Olenych, I. B.1, igor.olenych@lnu.edu.ua, Horbenko, Yu. Yu.2, Pavlyk, M. R.1, Sokolovskii, B. S.1, Dzendzelyuk, O. S.1
Source: Journal of Nano- & Electronic Physics; 2026, Vol. 18 Issue 2, p02026-1-02026-5, 5p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 193846233
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PubType: Academic Journal
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        Value: 10.21272/jnep.18(2).02026
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        Text: English
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        PageCount: 5
        StartPage: 02026-1
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      – TitleFull: Field-Effect Transistor Based on Reduced Graphene Oxide Film with ZnO and Porous Silicon Absorbing Layers for Ionizing Radiation Detection.
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              Text: 2026
              Type: published
              Y: 2026
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