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Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs.

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Bibliographic Details
Title: Source/drain epitaxial thickness scaling effects on DC performance and RC delay in stacked nanosheet gate-all-around FETs.
Authors: Lee, Hyunwoo1, Shin, Changhwan1, cshin@korea.ac.kr
Source: Semiconductor Science & Technology; 2026, Vol. 41 Issue 6, p1-11, 11p
Database: Applied Science & Technology Source
Description
ISSN:02681242
DOI:10.1088/1361-6641/ae6df5